Surface Characteristics of Etched and Non-etched Silicon Germanium (SiGe)/Si Graded Structure With Varying Ge Concentration Grown by Ultra-high Vacuum (UHV)/chemical Vapor Deposition (CVD) for Optoelectronic and Power Conversion ApplicationsSurface Characteristics of Etched and Non-etched Silicon Germanium (SiGe)/Si Graded Structure With Varying Ge Concentration Grown by Ultra-high Vacuum (UHV)/chemical Vapor Deposition (CVD) for Optoelectronic and Power Conversion Applications
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