Heavy Doping Effects in High Efficiency Silicon Solar Cells
Quarterly Report for Period Covering January 1, 1985 - March 31, 1985Microform - 1985?
"A correlation of chemical and structural measurements with electrical measurements made on specially designed test structures reveals the mechanisms responsible for low effective surface recombination velocities S for (polysilicon) silicon interfaces. The mechanisms are (1) the low mobility in the highly disordered interfacial region of thickness less than several hundred Angstrom units where the arsenic concentration exceeds 10 to the 20th power cu cm and (2) the usual potential barrier associated with a low-high junction (n n() or p p(). The second mechanism acts only if the adjoining crystalline silicon has a doping concentration about one order of magnitude below 10 to the 18th power cu cm. For a doping concentration of 0 to the 16th power cu cm, our measurements give S = 15 cm s. The work reported announces results for arsenic-doped polysilicon deposited at 670 C no intentional oxide is introduced. Implications for solar-cell design are suggested."--NTIS abstract
Publisher: [Pasadena, Calif. : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1985?]
Characteristics: 1 v. : ill. ; 28 cm.