Heavy Doping Effects in High Efficiency Silicon Solar Cells

Heavy Doping Effects in High Efficiency Silicon Solar Cells

Quarterly Report for Period Covering January 1, 1985 - March 31, 1985

Microform - 1985?
Rate this:
"A correlation of chemical and structural measurements with electrical measurements made on specially designed test structures reveals the mechanisms responsible for low effective surface recombination velocities S for (polysilicon) silicon interfaces. The mechanisms are (1) the low mobility in the highly disordered interfacial region of thickness less than several hundred Angstrom units where the arsenic concentration exceeds 10 to the 20th power cu cm and (2) the usual potential barrier associated with a low-high junction (n n() or p p(). The second mechanism acts only if the adjoining crystalline silicon has a doping concentration about one order of magnitude below 10 to the 18th power cu cm. For a doping concentration of 0 to the 16th power cu cm, our measurements give S = 15 cm s. The work reported announces results for arsenic-doped polysilicon deposited at 670 C no intentional oxide is introduced. Implications for solar-cell design are suggested."--NTIS abstract
Publisher: [Pasadena, Calif. : National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1985?]
Characteristics: 1 v. : ill. ; 28 cm.


From the critics

Community Activity


Add a Comment

There are no comments for this title yet.


Add Age Suitability

There are no ages for this title yet.


Add a Summary

There are no summaries for this title yet.


Add Notices

There are no notices for this title yet.


Add a Quote

There are no quotes for this title yet.

Explore Further

Browse by Call Number


Subject Headings


Find it at CPL

To Top